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2013-11-21 1 BFR92P Low Noise Silicon Bipolar RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR92PGFs 1=B2=E3=C SOT23 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltageV CEO 15V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2.5 Collector currentI C 45mA Base currentI B 4 Total power dissipation 1)
T S ≤ 93 °C P tot 280mW Junction temperatureT J 150°C Storage temperatureT Stg -55 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 2) R thJS 205K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For the definition of R thJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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