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BFR92T Aug-08-20011 NPN Silicon RF Transistor Preliminary data For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT92T (PNP) VPS05996 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR92TGFs1 = B2 = E3 = CSC75 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 15V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2.5 Collector currentI C 30mA Base currentI B 4 Total power dissipation T S 69°C 1) P tot 280mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS 290 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance
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