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2014-04-04 1 BFR93AW 1 2 3 Low Noise Silicon Bipolar RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR93AWR2s 1=B2=E3=C SOT323 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltageV CEO 12V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 2 Collector currentI C 90mA Base currentI B 9 Total power dissipation 1)
T S ≤ 108 °C P tot 300mW Junction temperatureT J 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT Stg -65 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 2) R thJS 140 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJS please refer to Application Note AN077 (Thermal Resistance Calculation)