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Jan-04-2002 1 BFR949F 1 2 3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR949FRKs 1 = B2 = E3 = C TSFP-3 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 10V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 1.5 Collector currentI C 35mA Base currentI B 4 Total power dissipation 1)
T S 93°C P tot 250mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 2) R thJS 225 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance