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BFR949L3 Aug-09-20011 NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR949L3RK1 = B2 = E3 = CTSLP-3-1 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 10V Collector-emitter voltageV CES 20 Collector-base voltageV CBO 20 Emitter-base voltageV EBO 1.5 Collector currentI C 35mA Base currentI B 4 Total power dissipation T S 100°C 1) P tot 250mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 2) R thJS tbd K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance