BFR96 datasheet pdf

MSC1309.PDF 10-25-99 BFR96 DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) SymbolParameterValueUnit V CEO Collector-Emitter Voltage15Vdc V CBO Collector-Base Voltage20Vdc V EBO Emitter-Base Voltage3.0Vdc I C Collector Current100mA Thermal Data P D Total Device Dissipation @ TC = 100ºC Derate above 100ºC 500 10 mWatts mW/ ºC Macro T (STYLE #2) Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Features

• • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA
• • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
• • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz