≤
55 °C
P
tot
280
mW
Junction temperatureT
j
150°C
Ambient temperatureT
A
- 65 + 150
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
340K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Specifications
Semiconductor Group1Aug-02-1996
BFS 17P
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz at collector
currents from 1mA to 20mA
• CECC-type available: CECC 50002/248.
TypeMarkingOrdering CodePin ConfigurationPackage
BFS 17PMCsQ62702-F9401 = B2 = E3 = CSOT-23
Maximum Ratings of any single Transistor
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
15V
Collector-base voltageV
CBO
25
Emitter-base voltageV
EBO
2.5
Collector currentI
C
25mA
Peak collector current
f ≥ 10 MHz
I
CM
50
Total power dissipation
T
S