1. Product profile
1.1 General description
The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power
amplifiers, such as pocket telephones and paging systems with signal frequencies up
to2GHz.
The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
1.2 Features and benefits
Low current consumption (100 A to 1 mA)
Low noise figure
Gold metallization ensures excellent reliability.
1.3 Quick reference data
Features
- 1. Product profile
- 1.1 General description
- 1.2 Features and benefits
- 1.3 Quick reference data
Specifications
[1]T
s
is the temperature at the soldering point of the collector tab.
BFT25A
NPN 5 GHz wideband transistor
Rev. 5 — 12 September 2011Product data sheet
SOT23
Table 1.Quick reference data
SymbolParameterConditionsMinTypMaxUnit
V
CBO
collector-base
voltage
open emitter--8V
V
CEO
collector-emitter
voltage
open base--5V
I
C
DC collector
current
--6.5mA
P
tot
total power
dissipation
up to T
s
= 165 C
[1]
--32mW
h
FE
DC current gainI
C
= 0.5 mA; V
CE
= 1 V5080200
f
T
transition
frequency
I
C
= 1 mA; V
CE
= 1 V;
T
amb
=25C;
f = 500 MHz
3.55-GHz
G
UM
maximum
unilateral power
gain
I
C
= 0.5 mA; V
CE
= 1 V;
T
amb
= 25 C;
f=1 GHz
-15-dB
Fnoise figure=
opt
; I
C
= 0.5 mA;
V
CE
= 1 V;
T
amb
=25 C; f = 1 GHz
-1.8-dB
=
opt
; I
C
= 1 mA;
V
CE
= 1 V;
T
amb
=25 C; f = 1 GHz
-2-dB