1. Product profile
1.1 General description
PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF
wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum
analyzers, etc. The transistor features low intermodulation distortion and high power gain;
due to its very high transition frequency, it also has excellent wideband properties and low
noise up to high frequencies. NPN complements are BFR92 and BFR92A.
1.2 Features and benefits
High power gain
Low intermodulation distortion
1.3 Applications
Oscilloscopes and spectrum analyzers
Radar systems
RF wideband amplifiers
1.4 Quick reference data
Features
- 1. Product profile
- 1.1 General description
- 1.2 Features and benefits
- 1.3 Applications
- 1.4 Quick reference data
Specifications
[1]T
s
is the temperature at the soldering point of the collector tab.
BFT92
PNP 5 GHz wideband transistor
Rev. 3 — 22 January 2016Product data sheet
Table 1.Quick reference data
SymbolParameterConditionsMinTypMaxUnit
V
CBO
collector-base voltageopen emitter--20 V
V
CEO
collector-emitter voltageopen base--15 V
I
C
DC collector current--25 mA
P
tot
total power dissipationup to T
s
= 95 C
[1]
--300mW
f
T
transition frequencyI
C
= 14 mA; V
CE
= 10 V; f = 500 MHz-5-GHz
C
re
feedback capacitanceI
C
= 2mA; V
CE
= 10 V; f = 1 MHz-0.7-pF
G
UM
maximum unilateral power
gain
I
C
= 14 mA; V
CE
= 10 V; f = 500 MHz
T
amb
= 25 C;
-18-dB
NFnoise figureI
C
= 5mA; V
CE
= 10 V; f = 500 MHz;
T
amb
= 25 C
-2.5-dB
d
im
intermodulation distortionI
C
= 14 mA; V
CE
= 10 V; R
L
=75 ;
V
o
=150 mV; T
amb
=25 C;
f
(p + q-r)
= 493.25 MHz
-60-dB