BFT92 datasheet pdf

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BFT92 datasheet pdf

Datasheet Information

Pages: 10

1. Product profile 1.1 General description PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR92 and BFR92A. 1.2 Features and benefits High power gain Low intermodulation distortion 1.3 Applications Oscilloscopes and spectrum analyzers Radar systems RF wideband amplifiers 1.4 Quick reference data

Features
  • 1. Product profile
  • 1.1 General description
  • 1.2 Features and benefits
  • 1.3 Applications
  • 1.4 Quick reference data
Specifications
[1]T s is the temperature at the soldering point of the collector tab. BFT92 PNP 5 GHz wideband transistor Rev. 3 — 22 January 2016Product data sheet Table 1.Quick reference data SymbolParameterConditionsMinTypMaxUnit V CBO collector-base voltageopen emitter--20 V V CEO collector-emitter voltageopen base--15 V I C DC collector current--25 mA P tot total power dissipationup to T s = 95 C [1] --300mW f T transition frequencyI C = 14 mA; V CE = 10 V; f = 500 MHz-5-GHz C re feedback capacitanceI C = 2mA; V CE = 10 V; f = 1 MHz-0.7-pF G UM maximum unilateral power gain I C = 14 mA; V CE = 10 V; f = 500 MHz T amb = 25 C; -18-dB NFnoise figureI C = 5mA; V CE = 10 V; f = 500 MHz; T amb = 25 C -2.5-dB d im intermodulation distortionI C = 14 mA; V CE = 10 V; R L =75 ; V o =150 mV; T amb =25 C; f (p + q-r) = 493.25 MHz -60-dB