BFT93 (1) datasheet pdf

Manufacturer

Unknown

File Size

58.71 KB

Updated

Oct 22, 2025, 03:25 PM

💡

Ready to Purchase This Component?

Our procurement experts can help you find the best options and pricing.

🔄

Find compatible alternatives

Discover drop-in replacements and equivalent components

💰

Real-time inventory & pricing

Get current stock levels and competitive quotes

🛠️

Technical engineering support

Expert guidance on specifications and compatibility

📧

Email us directly

support@all-datasheet-pdf.com

Response time: Typically within 24 hours during business days

BFT93 (1) datasheet pdf PDF Viewer

Loading PDF...

BFT93 (1) datasheet pdf

Datasheet Information

Pages: 7

Semiconductor Group1Dec-12-1996 BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFT 93X1sQ62702-F10631 = B2 = E3 = C SOT-23 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 35mA Base currentI B 3 Total power dissipation T S ≤ 58 °C P tot 300 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 305K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Specifications
Semiconductor Group1Dec-12-1996 BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFT 93X1sQ62702-F10631 = B2 = E3 = C SOT-23 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 35mA Base currentI B 3 Total power dissipation T S ≤ 58 °C P tot 300 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 305K/W 1) T S is measured on the collector lead at the soldering point to the pcb.

Need alternate parts or stock quotes?

We can help you confirm compatible replacements, availability, and pricing. Use the options below to reach our team.