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Semiconductor Group1Dec-12-1996 BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFT 93X1sQ62702-F10631 = B2 = E3 = C SOT-23 Maximum Ratings Parameter SymbolValuesUnit Collector-emitter voltageV CEO 12V Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 35mA Base currentI B 3 Total power dissipation T S ≤ 58 °C P tot 300 mW Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 305K/W 1) T S is measured on the collector lead at the soldering point to the pcb.