BFY183 (1) datasheet pdf

Datasheet Please read the Important Notice and Warnings at the end of this document IFAG PSS RFS D2 HIR www.infineon.com 1 of 6 Issue 5, January 2022 BFY183

HiRel NPN Silicon RF Transistor B F Y 1 8 3( E S ) Features  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  Hermetically sealed microwave package  f T = 8GHz F = 2.3 dB at 2 GHz Product validation  Space Qualified ESCC Detail Spec. No.: 5611/006 Type Variant No. 05 Description ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Configuration Package 1 2 3 4 BFY183(ES) For flight use C E B E Micro-X1 BFY183(P) 1 Not for flight use 1

Specifications