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BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS SymbolParameterValueUnit BFY50BFY51 V CBO Collector-Base Voltage (I E =0)8060V V CEO Collector-Emitter Voltage (I B =0)3530V V EBO Emitter-Base Voltage (I C =0)6V I C Collector Current1A I CM Collector Peak Current (t p <5ms)1.5A P tot Total Dissipation at T amb ≤25 o C at T case ≤25 o C 0.8 5 W W T stg Storage Temperature-65 to 200 o C T j Max. Operating Junction Temperature200 o C TO-39 1/5
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