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BGA 310 Semiconductor Group Sep-04-19981 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.4 GHz VPS05178 2 1 3 4 EHA07312 3 1 2, 4 RF IN RF OUT/Bias GND Circuit Diagram TypeMarkingOrdering CodePin ConfigurationPackage BGA 310BLsQ62702-G00411 RFout/bias2 GND3 RF input4 GNDSOT-143 Maximum Ratings Parameter ValueSymbolUnit Device current I D mA60 Total power dissipation, T S ≤ 99 °C 250 P tot mW R F input power dBm10 P RFin T j Junction temperature150°C Ambient temperature T A -65 ...+150 Storage temperature T stg -65 ...+150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 205 K/W 1) T S is measured on the collector lead at the soldering point to the pcb Semiconductor Group11998-11-01
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