BGA 420
Semiconductor Group
Jul-13-19981
in SIEGET
25-Technologie
Si-MMIC-Amplifier
Preliminary data
• Cascadable 50 Ω-gain block
• Unconditionally stable
• Gain |
S
21
|
2
= 13 dB at 1.8 GHz
Specifications
IP
3out
= +9 dBm at 1.8 GHz
(
V
D
= 3 V, I
D
= typ. 6.4 mA)
• Noise figure
NF = 2.2 dB at 1.8 GHz
• Reverse isolation > 28 dB and
return loss
IN / OUT > 12 dB at 1.8 GHz
VPS05605
4
2
1
3
EHA07385
D
V
4
2
1
IN
OUT
3
GND
Circuit Diagram
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypeMarkingOrdering CodePin ConfigurationPackage
BGA 420BLsQ62702-G00571, IN2, GND3, OUT4, VDSOT-343
Maximum Ratings
Parameter
SymbolValueUnit
Device current
I
D
15mA
Device voltage
V
D
V6
Total power dissipation, TS ≤ tbd °CP
tot
90mW
R
F
input powerP
RFin
0dBm
Junction temperature
T
j
150°C
Ambient temperature
T
A
-65 ...+150
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
≤ tbd
Junction - soldering point
1)
R
thJS
K/W
1) T
S
is measured on the emitter (GND) lead at the soldering point to the pcb
Semiconductor Group11998-11-01