BGA 425
Semiconductor Group
Jul-14-19981
Si-MMIC-Amplifier
in SIEGET
25-Technologie
VPS05605
4
2
1
3
Preliminary data
• Multifunctional casc. 50 Ω block (LNA / MIX)
• Unconditionally stable
• Gain |
S
21
|
2
= 18.5 dB at 1.8 GHz (appl.1)
gain |
S
21
|
2
= 22 dB at 1.8 GHz (appl.2)
Specifications
IP
3out
= +7 dBm at 1.8 GHz (V
D
=3V,I
D
=9.5mA)
• Noise figure
NF = 2.2 dB at 1.8 GHz
• Reverse isolation >28 dB (appl.1) >35 dB (appl.2)
• typical device voltage
V
D
= 2 V to 5 V
Tape loading orientation
Circuit Diagram
EHA07371
V
2, 5
4
IN
OUTA
+
3
6
OUTB
1
GND
ESD: Electrostatic discharge sensitive device,
observe handling precaution!
PIN Configuration
TypeMarkingOrdering Code1, Out B3, Out A2, GNDPackage
BGA 4254, IN5, GND6, +VBMsQ62702-G0058SOT-343
Maximum Ratings
Parameter
SymbolValueUnit
Device current
I
D
25mA
Device voltage
V
D
,+V
V6
Total power dissipation, T
S
≤ tbd °CP
tot
150mW
R
F
input powerP
RFin
-10dBm
Junction temperature
T
j
150°C
Ambient temperature
T
A
-65 ...+150
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ tbd
K/W
1) T
S
is measured on the ground lead at the soldering point to the pcb
Semiconductor Group11998-11-01