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BGA 427 Semiconductor Group Au -11-19981 in SIEGET 25-Technologie Si-MMIC-Amplifier VPS05605 4 2 1 3 Preliminary data • Cascadable 50 Ω-gain block • Unconditionally stable • Gain | S 21 | 2 = 18,5 dB at 1.8 GHz (appl.1) gain | S 21 | 2 = 22 dB at 1.8 GHz (appl.2) I P 3out = +7 dBm at 1.8 GHz (V D =3V, I D =9.4mA) • Noise figure NF = 2.2 dB at 1.8 GHz • typical device voltage V D = 2 V to 5 V • Reverse isolation < 35 dB (appl.2) EHA07378 V 2 1 IN OUT + 4 3 GND Circuit Diagram ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePackagePin Configuration Q62702-G00671, INBGA 4272, GND3, +V4, OutSOT-343BMs Maximum Ratings Symbol ValueParameterUnit Device current I D mA25 Device voltage6V V D ,+V P tot 150mW Total power dissipation, T S ≤ tbd °C dBm R F input powerP RFin -10 Junction temperature T j 150°C Ambient temperature-65 ...+150 T A Storage temperature T stg -65 ...+150 Thermal Resistance ≤ tbd K/WJunction - soldering point 1) R thJS 1) T S is measured on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group11998-11-01
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