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BGX400 Aug-20-20011 Silicon Switching Diodes Switching applications High breakdown voltage Halfbridge rectifier 1 2 3 VPS05161 EHA07365 3 1 2 TypeMarkingPin ConfigurationPackage BGX400GXs1=C1/A22=C23=A1SOT23 Maximum Ratings Parameter ValueSymbolUnit 400Diode reverse voltageV R V Peak reverse voltage400V RM Forward currentI F 250mA 2AI FS Surge forward current, t = 1 ms Total power dissipation, T S = 71 °CP tot mW250 Junction temperatureT j °C150 Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 315K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance