BGX50A (1) datasheet pdf

BGX50A 1Jul-31-2001 Silicon Switching Diode Array
Bridge configuration
High-speed switching diode chip VPS05178 2 1 3 4 EHA00007 2 1 4 3 TypeMarkingPin ConfigurationPackage BGX50AU1s1=C1/C22=A1/C43=A3/A44=A2/C3 SOT143 Maximum Ratings Parameter SymbolValueUnit Diode reverse voltageV R 50V Peak reverse voltageV RM 70 Forward currentI F 140mA Total power dissipation, T S = 74 °C P tot 210mW Junction temperatureT j 150°C Storage temperatureT stg 65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS
360K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance

Specifications