BPV11
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 03-May-13
1
Document Number: 81504
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
BPV11 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package with base terminal.
It is sensitive to visible and near infrared radiation.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: = ± 15°
• Base terminal connected
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Features
- • Package type: leaded
- • Package form: T-1¾
- • Dimensions (in mm): Ø 5
- • High photo sensitivity
- • High radiant sensitivity
- • Suitable for visible and near infrared radiation
- • Fast response times
- • Angle of half sensitivity: = ± 15°
- • Base terminal connected
- • Material categorization: For definitions of compliance
Specifications
APPLICATIONS
• Detector for industrial electronic circuitry, measurement
and control
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
12785
PRODUCT SUMMARY
COMPONENTI
ca
(mA) (deg)
0.1
(nm)
BPV1110± 15450 to 1080
ORDERING INFORMATION
ORDERING CODEPACKAGINGREMARKSPACKAGE FORM
BPV11BulkMOQ: 4000 pcs, 4000 pcs/bulkT-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETERTEST CONDITIONSYMBOLVALUEUNIT
Collector base voltageV
CBO
80V
Collector emitter voltageV
CEO
70V
Emitter base voltageV
EBO
5V
Collector currentI
C
50mA
Collector peak currentt
p
/T = 0.5, t
p
10 msI
CM
100mA
Power dissipationT
amb
47 °CP
V
150mW
Junction temperatureT
j
100°C
Operating temperature rangeT
amb
- 40 to + 100°C
Storage temperature rangeT
stg
- 40 to + 100°C
Soldering temperaturet 5 s, 2 mm from bodyT
sd
260°C
Thermal resistance junction/ambientConnected with Cu wire, 0.14 mm
2
R
thJA
350K/W