BPV11F datasheet pdf

BPV11F www.vishay.com Vishay Semiconductors

Rev. 1.6, 03-May-13 1 Document Number: 81505 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon NPN Phototransistor DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times • Angle of half sensitivity:  = ± 15° • Base terminal connected • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Features

• • Package type: leaded
• • Package form: T-1¾
• • Dimensions (in mm): Ø 5
• • High radiant sensitivity
• • Daylight blocking filter matched with 940 nm
• • Fast response times
• • Angle of half sensitivity:  = ± 15°
• • Base terminal connected
• • Material categorization: For definitions of compliance

Specifications