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BPV22F www.vishay.com Vishay Semiconductors
Rev. 1.6, 24-Aug-11 1 Document Number: 81508 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon PIN Photodiode DESCRIPTION BPV22F is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter bandwdith is matched with 900 nm to 950 nm IR emitters. The lens achieves 80 % of sensitivity improvement in comparison with flat package. FEATURES • Package type: leaded • Package form: side view • Dimensions (in mm): 4.5 x 5 x 6 • Radiant sensitive area (in mm 2 ): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times • Angle of half sensitivity: φ = ± 60° • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note **Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters Note • Test condition see table “Basic Characteristics” Note • MOQ: minimum order quantity 94 8633 PRODUCT SUMMARY COMPONENTI ra (μA)φ (deg)λ 0.5 (nm) BPV22F80± 60870 to 1050 ORDERING INFORMATION ORDERING CODEPACKAGINGREMARKSPACKAGE FORM BPV22FBulkMOQ: 4000 pcs, 4000 pcs/bulkSide view ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified) PARAMETERTEST CONDITIONSYMBOLVALUEUNIT Reverse voltageV R 60V Power dissipationT amb ≤ 25 °CP V 215mW Junction temperatureT j 100°C Operating temperature rangeT amb - 40 to + 100°C Storage temperature rangeT stg - 40 to + 100°C Soldering temperaturet ≤ 5 sT sd 260°C Thermal resistance junction/ambientConnected with Cu wire, 0.14 mm 2 R thJA 350K/W