BPW14N datasheet pdf

BPW14N TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 1 (6) Silicon NPN Phototransistor Description BPW14N is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens, featuring a viewing angle of ±12° makes it insensible to ambient straylight. A base terminal is avail- able to enable biasing and sensitivity control. Features DHermetically sealed case DLens window DNarrow viewing angle φ = ± 10° DExact central chip alignment DBase terminal available DHigh photo sensitivity DFast response times DSuitable for visible and near infrared radiation DSelected into sensitivity groups 94 8486 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings T amb = 25_C ParameterTest ConditionsSymbolValueUnit Collector Base VoltageV CBO 32V Collector Emitter VoltageV CEO 32V Emitter Base VoltageV EBO 5V Collector CurrentI C 50mA Peak Collector Currentt p /T = 0.5, t p x 10 msI CM 100mA Total Power DissipationT amb x 25 °CP tot 310mW Junction TemperatureT j 150°C Storage Temperature RangeT stg –55...+150°C Soldering Temperaturet x 5 sT sd 260°C Thermal Resistance Junction/AmbientR thJA 400K/W Thermal Resistance Junction/CaseR thJC 150K/W

Specifications