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BPW17N www.vishay.com Vishay Semiconductors
Rev. 1.8, 23-Aug-11 1 Document Number: 81516 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon NPN Phototransistor DESCRIPTION BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. FEATURES ⢠Package type: leaded ⢠Package form: T-ž ⢠Dimensions (in mm): Ă 1.8 ⢠High photo sensitivity ⢠High radiant sensitivity ⢠Suitable for visible and near infrared radiation ⢠Fast response times ⢠Angle of half sensitivity: Ď = Âą 12° ⢠Comliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note **Please see document âVishay Material Category Policyâ: www.vishay.com/doc?99902 APPLICATIONS ⢠Detector in electronic control and drive circuits Note ⢠Test condition see table âBasic Characteristicsâ Note ⢠MOQ: minimum order quantity 94 8638-1 PRODUCT SUMMARY COMPONENTI ca (mA)Ď (deg)Îť 0.1 (nm) BPW17N1.0Âą 12450 to 1040 ORDERING INFORMATION ORDERING CODEPACKAGINGREMARKSPACKAGE FORM BPW17NBulkMOQ: 5000 pcs, 5000 pcs/bulkT-ž ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified) PARAMETERTEST CONDITIONSYMBOLVALUEUNIT Collector emitter voltageV CEO 32V Emitter collector voltageV ECO 5V Collector currentI C 50mA Collector peak currentt p /T = 0.5, t p ⤠10 msI CM 100mA Power dissipationT amb ⤠55 °CP V 100mW Junction temperatureT j 100°C Operating temperature rangeT amb - 40 to + 100°C Storage temperature rangeT stg - 40 to + 100°C Soldering temperaturet ⤠3 sT sd 260°C Thermal resistance junction/ambientConnected with Cu wire, 0.14 mm 2 R thJA 450K/W
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