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BPW17N www.vishay.com Vishay Semiconductors
Rev. 1.8, 23-Aug-11 1 Document Number: 81516 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon NPN Phototransistor DESCRIPTION BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: φ = ± 12° • Comliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note **Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Detector in electronic control and drive circuits Note • Test condition see table “Basic Characteristics” Note • MOQ: minimum order quantity 94 8638-1 PRODUCT SUMMARY COMPONENTI ca (mA)φ (deg)λ 0.1 (nm) BPW17N1.0± 12450 to 1040 ORDERING INFORMATION ORDERING CODEPACKAGINGREMARKSPACKAGE FORM BPW17NBulkMOQ: 5000 pcs, 5000 pcs/bulkT-¾ ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified) PARAMETERTEST CONDITIONSYMBOLVALUEUNIT Collector emitter voltageV CEO 32V Emitter collector voltageV ECO 5V Collector currentI C 50mA Collector peak currentt p /T = 0.5, t p ≤ 10 msI CM 100mA Power dissipationT amb ≤ 55 °CP V 100mW Junction temperatureT j 100°C Operating temperature rangeT amb - 40 to + 100°C Storage temperature rangeT stg - 40 to + 100°C Soldering temperaturet ≤ 3 sT sd 260°C Thermal resistance junction/ambientConnected with Cu wire, 0.14 mm 2 R thJA 450K/W