BPW46
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 03-Jun-14
1
Document Number: 81524
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BPW46 is a PIN photodiode with high speed and high
radiant sensitivity in a clear, side view plastic package. It is
sensitive to visible and near infrared radiation.
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 5 x 3 x 6.4
• Radiant sensitive area (in mm
2
): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: = ± 65°
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Features
- • Package type: leaded
- • Package form: side view
- • Dimensions (L x W x H in mm): 5 x 3 x 6.4
- • Radiant sensitive area (in mm
- • High photo sensitivity
- • High radiant sensitivity
- • Suitable for visible and near infrared radiation
- • Fast response times
- • Angle of half sensitivity: = ± 65°
- • Material categorization: for definitions of compliance
Specifications
APPLICATIONS
• High speed photo detector
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8632
PRODUCT SUMMARY
COMPONENTI
ra
(μA) (deg)
0.1
(nm)
BPW4650± 65430 to 1100
ORDERING INFORMATION
ORDERING CODEPACKAGINGREMARKSPACKAGE FORM
BPW46BulkMOQ: 4000 pcs, 4000 pcs/bulkSide view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETERTEST CONDITIONSYMBOLVALUEUNIT
Reverse voltageV
R
60V
Power dissipationT
amb
25 °CP
V
215mW
Junction temperatureT
j
100°C
Operating temperature rangeT
amb
-40 to +100°C
Storage temperature rangeT
stg
-40 to +100°C
Soldering temperaturet 5 sT
sd
260°C
Thermal resistance junction/ambientConnected with Cu wire, 0.14 mm
2
R
thJA
350K/W