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BPX 48 BPX 48 F Semiconductor Group348 Silizium-Differential-Fotodiode Silicon Differential Photodiode Wesentliche Merkmale lSpeziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (BPX 48) und bei 920 nm (BPX 48 F) lHohe Fotoempfindlichkeit lDIL-Plastikbauform mit hoher Packungsdichte lDoppeldiode mit extrem hoher Gleichmäβigkeit Anwendungen lNachlaufsteuerung lKantenführungen lWeg- bzw. Winkelabtastungen lIndustrieelektronik l“Messen/Steuern/Regeln” Features lEspecially suitable for applications from 400 nm to 1100 nm (BPX 48) and of 920 nm (BPX 48 F) lHigh photosensitivity lDIL plastic package with high packing density lDouble diode with extremely high homogeneousness Application lFollow-up control lEdge control lPath and angle scanning lIndustrial electronics lFor control and drive circuits BPX 48 BPX 48 F Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. feo06638 feof6638 10.95
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