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BPW76 Vishay Telefunken 1 (6) Rev. 2, 20-May-99 www.vishay.de •FaxBack +1-408-970-5600 Document Number 81526 Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal is available to enable biasing and sen- sitivity control. Features DHermetically sealed case DFlat window DVery wide viewing angle φ = ± 40° DExact central chip alignment DLong range light barrier with an additional optics DBase terminal available DHigh photo sensitivity DSuitable for visible and near infrared radiation DSelected into sensitivity groups 94 8401 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings T amb = 25_C ParameterTest ConditionsSymbolValueUnit Collector Base VoltageV CBO 80V Collector Emitter VoltageV CEO 70V Emitter Base VoltageV EBO 5V Collector CurrentI C 50mA Peak Collector Current t p /T = 0.5, t p x 10 ms I CM 100mA Total Power Dissipation T amb x 25 °C P tot 250mW Junction TemperatureT j 125°C Storage Temperature RangeT stg –55...+125°C Soldering Temperature t x 5 s T sd 260°C Thermal Resistance Junction/AmbientR thJA 400K/W Thermal Resistance Junction/CaseR thJC 150K/W