BPW77N datasheet pdf

BPW77N Vishay Telefunken 1 (6) Rev. 2, 20-May-99 www.vishay.de •FaxBack +1-408-970-5600 Document Number 81527 Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermeti- cally sealed metal case. Its glass lens featuring a viewing angle of ±10° makes it insensible to ambient straylight. A base terminal is available to enable biasing and sen- sitivity control. Features DHermetically sealed case DLens window DNarrow viewing angle φ = ± 10° DExact central chip alignment DBase terminal available DHigh photo sensitivity DSuitable for visible and near infrared radiation DSelected into sensitivity groups 94 8486 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings T amb = 25_C ParameterTest ConditionsSymbolValueUnit Collector Base VoltageV CBO 80V Collector Emitter VoltageV CEO 70V Emitter Base VoltageV EBO 5V Collector CurrentI C 50mA Peak Collector Current t p /T = 0.5, t p x 10 ms I CM 100mA Total Power Dissipation T amb x 25 °C P tot 250mW Junction TemperatureT j 125°C Storage Temperature RangeT stg –55...+125°C Soldering Temperature t x 5 s T sd 260°C Thermal Resistance Junction/AmbientR thJA 400K/W Thermal Resistance Junction/CaseR thJC 150K/W

Specifications