BPW78 datasheet pdf

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BPW78 datasheet pdf

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BPW78 Vishay Telefunken 1 (5) Rev. 2, 20-May-99 www.vishay.de •FaxBack +1-408-970-5600 Document Number 81528 Silicon NPN Phototransistor Description BPW78 is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (l p > 850nm). Features DPlastic case with IR filter DSuitable for near infrared radiation DHigh radiant sensitivity DSuper flat sideview case with spherical lens DLens integrated DIrradiation direction vertical to mounting direction DAngle of half sensitivity φ = ± 25° DSelected into sensitivity groups DCompatibel with CQX48 94 8487 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings T amb = 25_C ParameterTest ConditionsSymbolValueUnit Collector Emitter VoltageV CEO 32V Emitter Collector VoltageV ECO 5V Collector CurrentI C 100mA Peak Collector Current t p /T = 0.5, t p x 10 ms I CM 200mA Total Power Dissipation T amb x 40 °C P tot 150mW Junction TemperatureT j 100°C Storage Temperature RangeT stg –55...+100°C Soldering Temperature t x 5 s T sd 260°C Thermal Resistance Junction/AmbientR thJA 400K/W

Specifications
BPW78 Vishay Telefunken 1 (5) Rev. 2, 20-May-99 www.vishay.de •FaxBack +1-408-970-5600 Document Number 81528 Silicon NPN Phototransistor Description BPW78 is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (l p > 850nm). Features DPlastic case with IR filter DSuitable for near infrared radiation DHigh radiant sensitivity DSuper flat sideview case with spherical lens DLens integrated DIrradiation direction vertical to mounting direction DAngle of half sensitivity φ = ± 25° DSelected into sensitivity groups DCompatibel with CQX48 94 8487 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings T amb = 25_C ParameterTest ConditionsSymbolValueUnit Collector Emitter VoltageV CEO 32V Emitter Collector VoltageV ECO 5V Collector CurrentI C 100mA Peak Collector Current t p /T = 0.5, t p x 10 ms I CM 200mA Total Power Dissipation T amb x 40 °C P tot 150mW Junction TemperatureT j 100°C Storage Temperature RangeT stg –55...+100°C Soldering Temperature t x 5 s T sd 260°C Thermal Resistance Junction/AmbientR thJA 400K/W