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BPW85 Vishay Telefunken 1 (6) Rev. 3, 16-Nov-99 www.vishay.de •FaxBack +1-408-970-5600 Document Number 81531 Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 (ø 3 mm) plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radi- ation. The viewing angle of ± 25° makes it insensible to ambi- ent straylight. Features DFast response times DHigh photo sensitivity DStandard T–1 (ø 3 mm ) clear plastic package DAxial terminals DAngle of half sensitivity φ = ± 25° DSuitable for visible and near infrared radiation DSelected into sensitivity groups 94 8396 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings T amb = 25_C ParameterTest ConditionsSymbolValueUnit Collector Emitter VoltageV CEO 70V Emitter Collector VoltageV ECO 5V Collector CurrentI C 50mA Peak Collector Current t p /T = 0.5, t p x 10 ms I CM 100mA Total Power Dissipation T amb x 55 °C P tot 100mW Junction TemperatureT j 100°C Storage Temperature RangeT stg –55...+100°C Soldering Temperature t x 3 s, 2 mm from case T sd 260°C Thermal Resistance Junction/AmbientR thJA 450K/W