BPX43 datasheet pdf

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BPX43 datasheet pdf

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BPX43 Vishay Telefunken 1 (6) Rev. 2, 20-May-99 www.vishay.de •FaxBack +1-408-970-5600 Document Number 81534 Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermeti- cally sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation makes it ideal for linear applications. A base terminal is available to enable biasing and sensitivity control. Features DHermetically sealed TO–18 case DLens window DAngle of half sensitivity φ = ± 15° DExact central chip alignment DBase terminal available DVery high photo sensitivity DHigh linearity DSuitable for visible and near infrared radiation DSelected into sensitivity groups 94 8402 Applications Detector for analogue and digital applications in industrial electronics, measuring and control, e.g. long range light barriers with additional optics, optical switches, alarm systems. Absolute Maximum Ratings T amb = 25_C ParameterTest ConditionsSymbolValueUnit Collector Base VoltageV CBO 80V Collector Emitter VoltageV CEO 70V Emitter Base VoltageV EBO 7V Collector CurrentI C 50mA Peak Collector Current t p x 10 ms I CM 200mA Total Power Dissipation T amb x 25 °C P tot 250mW Junction TemperatureT j 125°C Operating Temperature RangeT op –55...+125°C Storage Temperature RangeT stg –55...+125°C Soldering Temperature t x 5 s, distance from touching border y 2 mm T sd 260°C Thermal Resistance Junction/AmbientR thJA 400K/W Thermal Resistance Junction/CaseR thJC 150K/W

Specifications
BPX43 Vishay Telefunken 1 (6) Rev. 2, 20-May-99 www.vishay.de •FaxBack +1-408-970-5600 Document Number 81534 Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermeti- cally sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation makes it ideal for linear applications. A base terminal is available to enable biasing and sensitivity control. Features DHermetically sealed TO–18 case DLens window DAngle of half sensitivity φ = ± 15° DExact central chip alignment DBase terminal available DVery high photo sensitivity DHigh linearity DSuitable for visible and near infrared radiation DSelected into sensitivity groups 94 8402 Applications Detector for analogue and digital applications in industrial electronics, measuring and control, e.g. long range light barriers with additional optics, optical switches, alarm systems. Absolute Maximum Ratings T amb = 25_C ParameterTest ConditionsSymbolValueUnit Collector Base VoltageV CBO 80V Collector Emitter VoltageV CEO 70V Emitter Base VoltageV EBO 7V Collector CurrentI C 50mA Peak Collector Current t p x 10 ms I CM 200mA Total Power Dissipation T amb x 25 °C P tot 250mW Junction TemperatureT j 125°C Operating Temperature RangeT op –55...+125°C Storage Temperature RangeT stg –55...+125°C Soldering Temperature t x 5 s, distance from touching border y 2 mm T sd 260°C Thermal Resistance Junction/AmbientR thJA 400K/W Thermal Resistance Junction/CaseR thJC 150K/W