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BPY 64 P Semiconductor Group197 Wesentliche Merkmale lSpeziell geeignet für Anwendungen im Bereich von 420 nm bis 1060 nm lKathode = Chipunterseite lMit feuchtigkeitsabweisender Schutzschicht überzogen lWeiter Temperaturbereich Anwendungen lfür Meβ-, Steuer- und Regelzwecke lzur Abtastung von Lichtimpulsen lquantitative Lichtmessung im sichtbaren Licht- und nahen Infrarotbereich Features lEspecially suitable for applications from 420 nm to 1060 nm lCathode = back contact lCoated with a humidity-proof protective layer lWide temperature range Applications lFor control and drive circuits lLight pulse scanning lQuantitative light measurements in the visible light and near infrared range Typ Type Bestellnummer Ordering Code BPY 64 PQ60215-Y67 Silizium-Fotoelement Silicon Photovoltaic Cell BPY 64 P Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. fso06636 10.95
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