BS616LV2011 datasheet pdf

R0201-BS616LV2011 Revision 2.5 April 2002 1 Very Low Power/Voltage CMOS SRAM 128K X 16 bit • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0VC-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current Vcc = 5.0VC-grade: 40mA (Max.) operating current I -grade: 45mA (Max.) operating current 0.6uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin „FEATURES The BS616LV2011 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2011 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2011 is available in DICE form, JEDEC standard 44-pin TSOP Type II package , JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package. „DESCRIPTION Row Decoder Memory Array 1024 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A3 A2 A1 Data Input Buffer Control Gnd Vcc OE DQ0 A16 A7 A15 16 16 16 16 WE CE DQ15 A5 A6 A13 14 128 2048 „BLOCK DIAGRAM 1024 20 A14 A12 A9 A4 A0 A11 A8 Address Input Buffer A10 Address Input Buffer . . . . UB . . . . LB „PRODUCT FAMILY „PIN CONFIGURATIONS Brilreserves the right to modify document contents without notice.liance Semiconductor Inc. BS616LV2011 A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC GND DQ4 DQ5 DQ6 DQ7 WE A16 A15 A14 A13 A12 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 NC 1 2 3 4 14 16 19 21 22 43 31 29 27 25 23 5 6 7 8 9 10 11 12 39 38 37 36 35 34 33 BS616LV2011EC BS616LV2011EI 13 15 17 18 20 44 42 41 40 32 30 28 26 24 POWER DISSIPATION SPEED ( ns ) STANDBY ( I CCSB1 , Max ) Operating ( I CC , Max ) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE Vcc= 3.0V Vcc= 3.0V Vcc= 5.0V Vcc= 3.0V Vcc= 5.0V PKG TYPE BS616LV2011DCDICE BS616LV2011ECTSOP2-44 BS616LV2011TCTSOP1-48 BS616LV2011AC +0 O C to +70 O C2.4V ~ 5.5V70/100 40mA BGA-48-0608 0.7uA6uA20mA BS616LV2011DIDICE BS616LV2011EITSOP2-44 BS616LV2011TITSOP1-48 BS616LV2011AI -40 O C to +85 O C2.4V ~ 5.5V70/100 45mA BGA-48-0608 1.5uA25uA25mA 48-ball BGA top view G H F E D C A9 A8 D15 D14 VSS D9 D13 A14 D12 D11 D10 A5 B D8 A3 A0 A11A10 A15D5 A16 A7 A6 D4 D3 D1 D7 D6 D2 A4 A1A2 D0 N.C. VCC VSS VCC N.C. CE N.C.N.C. N.C. N.C. A12 A13 WE ALB 1 UB OE 23456 BSI

Features

• • Very low operation voltage : 2.4 ~ 5.5V
• • Very low power consumption :
• 0.1uA (Typ.) CMOS standby current
• 0.6uA (Typ.) CMOS standby current
• • High speed access time :
• -70 70ns (Max.) at Vcc = 3.0V
• -10 100ns (Max.) at Vcc = 3.0V
• • Automatic power down when chip is deselected
• • Three state outputs and TTL compatible
• • Fully static operation
• • Data retention supply voltage as low as 1.5V
• • Easy expansion with CE and OE options
• • I/O Configuration x8/x16 selectable by LB and UB pin
• 3.0V
• 3.0V
• 5.0V
• 3.0V
• 5.0V
• 0.7uA6uA20mA
• -40
• 1.5uA25uA25mA