BS616LV2018 datasheet pdf

Revision 2.0 April 2002 1 R0201-BS616LV2018 Very Low Power/Voltage CMOS SRAM 128K X 16 bit • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0VC-grade: 16mA (Max.) operating current I -grade: 20mA (Max.) operating current 0.1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV2018 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2018 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2018 is available in DICE form, JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package. „DESCRIPTION „FEATURES „BLOCK DIAGRAM „PRODUCT FAMILY „PIN CONFIGURATIONS Brilliance Semiconductor Inc.reserves the right to modify document contents without notice. Row Decoder Memory Array 1024 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A3 A2 A1 Data Buffer Input Control Gnd Vcc OE WE CE DQ15 DQ0 A16 A5 A6 A7 A15 A13 16 16 16 16 14 128 2048 1024 20 A14 A12 A9 A4 A0 A11 A8 Address Input Buffer A10 Address Input Buffer . . . . UB . . . . LB BS616LV2018 G H F E D C A9A8 D15 D14 VSS D9 D13 A12 A14 D12 D11 D10A5 B A D8 LB 1 UB OE A3 A0 23 A11A10 A13 A15 WE D5 A16 A7 A6 D4 D3 D1 D7 D6 D2 A4 A1A2 45 D0 6 N.C. VCC VSS VCC N.C. CE N.C. N.C. N.C. N.C. 48-ball BGA top view BSI POWER DISSIPATION SPEED (ns) STANDBY (I CCSB1 , Max) Operating (I CC , Max) PRODUCT FAM ILY OPERATING TEMPERATURE Vcc RANGE Vcc= 3.0V Vcc=3.0V Vcc=3.0V PKG TYPE BS616LV2018DCDICE BS616LV2018TCTSOP1-48 BS616LV2018AC 0 O C to +70 O C700.7 uA 16 mA BGA-48-0608 BS616LV2018DIDICE BS616LV2018TITSOP1-48 BS616LV2018AI -40 O C to +85 O C 2.4V ~ 3.6 V 70 1.5 uA 20 mA BGA-48-0608

Features

• • Very low operation voltage : 2.4 ~ 3.6V
• • Very low power consumption :
• 0.1uA (Typ.) CMOS standby current
• • High speed access time :
• -70 70ns (Max.) at Vcc = 3.0V
• • Automatic power down when chip is deselected
• • Three state outputs and TTL compatible
• • Fully static operation
• • Data retention supply voltage as low as 1.5V
• • Easy expansion with CE and OE options
• • I/O Configuration x8/x16 selectable by LB and UB pin
• 3.0V
• -40
• 2.4V ~
• 3.6
• 1.5