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H SiliconMOSFETTechnology Operationfrom24Vto50V HighPower Gain ExtremeRuggedness Internal InputandOutputMatching ExcellentThermal Stability AllGoldBondingScheme Pb-freeand RoHSCompliant Highvoltageverticaltechnology is well suitedfor highpower pulsedapplicationsinthe L-Band includingIFF,TCASand Mode-Sapplications. Table1:Typical RF Performance inbroadbandtextfixtureat25°Ctemperaturewith RFpulseconditionsofpulsewidth = 50sandpulseduty cycle=2%. ThehighpowerHVV1011-600deviceisanenhancementmodeRFMOSFETpowertransistor designedforpulsedapplicationsintheL-Bandfrom1030MHzto1090MHz.Thehighvoltage HVVFETtechnologyproducesover600Wofpulsedoutputpowerwhileofferinghighgain, highefficiency,andeaseofmatchingwitha50Vsupply. Theverticaldevicestructureassures highreliabilityandruggednessasthedeviceisspecifiedtowithstanda20:1VSWRatall phaseanglesunderfullratedoutputpower. DevicePart Number:HVV1011-600 EvaluationKitPartNumber: HVV1011-600-EK ORDERINGINFORMATION DESCRIPTION TYPICALPERFORMANCE FEATURES REV.A 7525ETHELAVENUENORTHHOLLYWOOD,CA91605(818)982-1200WWW.ADSEMI.COM Specificationsaresubject to change without notice. GE PACKAGE