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! SiliconMOSFETTechnology Operationfrom24Vto50V HighPower Gain ExtremeRuggedness Internal InputandOutputMatching ExcellentThermal Stability AllGoldBondingScheme Pb-freeand RoHSCompliant Table1:Typical RF Performance inbroadbandtextfixtureat25°Ctemperaturewith RFpulseconditionsofpulsewidth = 10sandpulseduty cycle=1%. ThehighpowerHVV1012-50deviceisanenhancementmodeRFMOSFETpower transistordesignedforpulsedapplicationsintheL-Bandfrom1025MHzto1150MHz.The highvoltageMOSFETtechnologyproducesover50Wofpulsedoutputpowerwhile offeringhighgain,highefficiency,andeaseofmatchingwitha50Vsupply.Thevertical devicestructureassureshighreliabilityandruggednessasthedeviceisspecifiedto withstanda20:1VSWRatallphaseanglesunderfullratedoutputpower. DevicePart Number:HVV1012-50 EvaluationKitPartNumber: HVV1012-50-EK ORDERINGINFORMATION DESCRIPTION TYPICALPERFORMANCE FEATURES REV.A 7525ETHELAVENUENORTHHOLLYWOOD,CA91605(818)982-1200WWW.ADSEMI.COM Specificationsaresubject to change without notice. MODEFREQUENCYVDDIDQPowerGAINEFFICIENCYIRL (MHz)(V) (mA)(W)(dB)(%)(dB) Class AB 11505010025019.54820:1 2 2 2 2 GE PACKAGE