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© 2013 IXYS CORPORATION, All Rights Reserved XPT TM 650V IGBT GenX3 TM IXXA30N65C3HV V CES = 650V I C110 = 30A V CE(sat) ≤ ≤ ≤ ≤ ≤
V GE = 0V 10μA T J = 150°C 250 μA I GES V CE = 0V, V GE = ±20V ±100 nA V CE(sat) I C = 24A, V GE = 15V, Note 1 1.85 2.20 V T J = 150°C 2.30 V SymbolTest ConditionsMaximum Ratings V CES T J = 25°C to 175°C 650V V CGR T J = 25°C to 175°C, R GE = 1MΩ 650V V GES Continuous ±20V V GEM Transient ±30V I C25 T C = 25°C 52 A I C110 T C = 110°C 30 A I CM T C = 25°C, 1ms 113A I A T C = 25°C 20 A E AS T C = 25°C 250 mJ SSOAV GE = 15V, T VJ = 150°C, R G = 10Ω I CM = 48A (RBSOA) Clamped Inductive Load @V CE ≤ V CES t sc V GE = 15V, V CE = 360V, T J = 150°C 10 μs (SCSOA)R G = 82Ω, Non Repetitive P C T C = 25°C230W T J -55 ... +175°C T JM 175°C T stg -55 ... +175°C T L Maximum Lead Temperature for Soldering300°C T SOLD 1.6 mm (0.062in.) from Case for 10s260 °C Weight 2.5 g G = Gate C = Collector E = Emitter Tab = Collector G E TO-263 D (Tab) Preliminary Technical Information