© 2010 IXYS CORPORATION, All Rights Reserved
XPT
TM
600V
GenX3
TM
IXXH100N60B3
V
CES
= 600V
I
C110
= 100A
V
CE(sat)
≤ ≤
≤ ≤
≤
V
GE
= 0V 25μA
T
J
= 150°C 2 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 70A, V
GE
= 15V, Note 1 1.50 1.80 V
T
J
= 150°C 1.77 V
Features
z
Optimized for 10-30kHz Switching
z
Square RBSOA
z
Avalanche Rated
z
Short Circuit Capability
z
High Current Handling Capability
z
International Standard Package
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 AD
G
C
E
Tab
Advance Technical Information
Specifications
1.80V
t
fi(typ)
= 150ns
SymbolTest ConditionsMaximum Ratings
V
CES
T
J
= 25°C to 175°C 600V
V
CGR
T
J
= 25°C to 175°C, R
GE
= 1MΩ 600V
V
GES
Continuous ±20V
V
GEM
Transient ±30V
I
C25
T
C
= 25°C ( Chip Capability ) 210 A
I
LRMS
Terminal Current Limit 160 A
I
C110
T
C
= 110°C 100A
I
CM
T
C
= 25°C, 1ms 400A
I
A
T
C
= 25°C 50 A
E
AS
T
C
= 25°C 600 mJ
SSOAV
GE
= 15V, T
VJ
= 150°C, R
G
= 2Ω I
CM
= 200A
(RBSOA) Clamped Inductive Load @ ≤ V
CES
t
sc
V
GE
= 15V, V
CE
= 360V, T
J
= 150°C 10 μs
(SCSOA)R
G
= 10Ω, Non Repetitive
P
C
T
C
= 25°C830W
T
J
-55 ... +175°C
T
JM
175°C
T
stg
-55 ... +175°C
T
L
Maximum Lead Temperature for Soldering300°C
T
SOLD
1.6 mm (0.062in.) from Case for 10s260 °C
M
d
Mounting Torque1.13/10Nm/lb.in.
Weight6g
DS100284(12/10)
Extreme Light Punch Through
IGBT for 10-30 kHz Switching
SymbolTest Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 600 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5V
I
CES
V
CE
= V
CES
,