PMV45EN2-nexperia datasheet pdf

PMV45EN2 30 V, N-channel Trench MOSFET 10 January 2017Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic level compatible • Very fast switching • Trench MOSFET technology • Enhanced power dissipation capability of 1115 mW 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data SymbolParameterConditionsMinTypMaxUnit V DS drain-source voltage--30V V GS gate-source voltage T j = 25 °C -20-20V I D drain currentV GS = 10 V; T amb = 25 °C; t ≤ 5 s [1] --5.1A Static characteristics R DSon drain-source on-state resistance V GS = 10 V; I D = 4.1 A; T j = 25 °C-3542mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 .

Features

• 1. General description
• 2. Features and benefits
• • Logic level compatible
• • Very fast switching
• • Trench MOSFET technology
• • Enhanced power dissipation capability of 1115 mW
• 3. Applications
• • Relay driver
• • High-speed line driver
• • Low-side load switch
• • Switching circuits
• 4. Quick reference data
• -20-20V
• --5.1A