BC857B datasheet pdf

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Oct 22, 2025, 03:25 PM

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BC857B datasheet pdf

Datasheet Information

Pages: 3

Packaging specifications Package Code Taping Basic ordering unit (pieces) BC857B T116 3000 Type

1/2 www.rohm.com ○ c 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.B Each lead has same dimensions (1)Emitter (2)Base (3)Collector BC857B 0.45 0.95 0.15 0.2Min. 2.4 1.3 2.9 0.95 ( 1 ) ( 3 ) 0.95 ( 2 ) 1.9 0.4 Abbreviated symbol : G3F PNP small signal transistor BC857B

Specifications
Absolute maximum ratings (Ta=25C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE Parameter V CBO VCEO VEBO PC Tj Tstg −50V V V A °C °C −45 −5 −0.1 I C ∗ 0.20 0.35 W W 150 −65 to 150 SymbolLimitsUnit

Electrical characteristics (Ta=25C) Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-base cutoff current Collector-emitter saturation voltage Base-emitter voltage DC current transfer ratio Collector-base cutoff current Collector outpu capacitance ParameterSymbol BV CEO BVCBO BVEBO ICBO VCE(sat1) VCE(sat2) hFE fT ICBO Min. −45 −50 −5 − − −0.6 − − − − − − − 250 − − − − − −0.015 −0.3 −0.75 210−480 − −4 VI C= −1mA I C= −50μA I E= −50μA V CB= −30V I C/IB= −10mA/ −0.5mA V CE= −5V, IC= −10mA V CE= 5V, IC= −2mA V CE= −5V, IE= 20mA, f=100MHz V CB= −30V V V μA V − MHz μA Cob −−4.5V CB= −10V, f=1MHzpF Typ.Max.UnitConditions VBE(on) − − −0.65 I C/IB= −100mA/ −5mAV V Transition frequency

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