BC878 (1) datasheet pdf

SIEMENS PNP Silicon Darlington Transistors BC 876 0 l 0 0 High current gain High collector current Low collector-emitter Saturation vottage Complementary types: BC 875, BC 877, BC 879 (NPN) . . . BC 880 1 Type Marking Ordering Code Pin Configuration Packagel) 12 3 BC876 -’ C62702-C943 E C BTO-92 BC 878 C62702-C942 BC880 .C62702-C941 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Symbol ValuesUnit BC876BC878BC 880 VCM456080V vcrm6080100 VEB0 5 Collector current IC 1A Peak collector currentichl 2 Base currentIe100 mA’ Peak base current IBM200 Total power dissipation. TC = 99 % 2) P l~(0.8 (1) W Junction temperature Ti 150% Storage temperature range Tstp -65 . . . + 150 Thermal Resistance Junction - ambientz)RthJA <156 Klw Junction - case 3) RäX s75 1)For detailed information sec chapter Package Outtines. 2) If transistors wftf-~ max. 4 mm lead fangth are fixad on PCBs with a min. 10 mm x 10 mm larga coppar area for the collector terminal, Rnu = 125 KAV and thus P IOIMX = 1 W at TA = 25 ‘C. 3)Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. 387

Specifications