BCF81 (1) datasheet pdf

1 ) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses t p = 300
s, duty cycle
2% – Gemessen mit Impulsen t p = 300
s, Schaltverhältnis
2% 22 01.11.2003 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 3 Type Code 1.9 BCF 81General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung250 mW Plastic caseSOT-23 Kunststoffgehäuse(TO-236) Weight approx. – Gewicht ca.0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B2 = E3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25
C)Grenzwerte (T A = 25
C) BCF 81 Collector-Emitter-voltageB openV CE0 45 V Collector-Base-voltageE openV CB0 50 V Emitter-Base-voltageC openV EB0 5 V Power dissipation – VerlustleistungP tot 250 mW 1 ) Collector current – Kollektorstrom (DC)I C 100 mA Peak Collector current – Kollektor-SpitzenstromI CM 200 mA Peak Base current – Basis-SpitzenstromI BM 100 mA Junction temperature – SperrschichttemperaturT j 150
C Storage temperature – LagerungstemperaturT S - 65...+ 150
C Characteristics (T j = 25
C)Kennwerte (T j = 25
C) Min.Typ.Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, V CB = 20 VI CB0 ––100 nA I E = 0, V CB = 20 V, T j = 100
CI CB0 ––10
A Emitter-Base cutoff current – Emitterreststrom I C = 0, V EB = 5 VI EB0 ––100 nA DC current gain – Kollektor-Basis-Stromverhältnis 2 ) V CE = 5 V, I C = 2 mAh FE 420–800 www.DataSheet4U.com

Specifications