BC328-16 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Amplifier Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolBC327BC328Unit Collector – Emitter VoltageV CEO –45–25Vdc Collector – Base VoltageV CBO –50–30Vdc Emitter – Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –800mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) CharacteristicSymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (I C = –10 mA, I B = 0)BC327 BC328 V (BR)CEO –45 –25 — — — — Vdc Collector – Emitter Breakdown Voltage (I C = –100 μA, I E = 0)BC327 BC328 V (BR)CES –50 –30 — — — — Vdc Emitter – Base Breakdown Voltage (I E = –10 mA, I C = 0) V (BR)EBO –5.0——Vdc Collector Cutoff Current (V CB = –30 V, I E = 0)BC327 (V CB = –20 V, I E = 0)BC328 I CBO — — — — –100 –100 nAdc Collector Cutoff Current (V CE = –45 V, V BE = 0)BC327 (V CE = –25 V, V BE = 0)BC328 I CES — — — — –100 –100 nAdc Emitter Cutoff Current (V EB = –4.0 V, I C = 0) I EBO ——–100nAdc Order this document by BC327/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC327,-16,-25 BC328,-16,-25 CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 1 2 BASE 3 EMITTER

Specifications