BC337-40 (1) datasheet pdf

© Semiconductor Components Industries, LLC, 2013 November, 2013 − Rev. 8 1Publication Order Number: BC337/D BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features •These are Pb−Free Devices MAXIMUM RATINGS RatingSymbolValueUnit Collector − Emitter VoltageV CEO 45Vdc Collector − Base VoltageV CBO 50Vdc Emitter − Base VoltageV EBO 5.0Vdc Collector Current − ContinuousI C 800mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 W mW/°C Operating and Storage Junction Temperature Range T J , T stg −55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction−to−Ambient R q JA 200°C/W Thermal Resistance, Junction−to−Case R q JC 83.3°C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ORDERING INFORMATION COLLECTOR 1 2 BASE 3 EMITTER MARKING DIAGRAM BC33 7−xx AYWWG G BC337−xx = Device Code (Refer to page 4) A = Assembly Location Y = Year WW = Work Week G =Pb−Free Package (Note: Microdot may be in either location) 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3 TO−92 CASE 29 STYLE 17

Features

• •These are Pb−Free Devices
• 5.0Vdc
• 5.0
• 1.5
• 83.3°C/W
• *For additional information on our Pb−Free strategy and soldering details, please