BC369 (1) datasheet pdf

www.DataSheet4U.com 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Amplifier Transistors MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 20Vdc Collector – Emitter VoltageV CES 25Vdc Emitter – Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 1.0Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to AmbientR qJA 200°C/W Thermal Resistance, Junction to CaseR qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) CharacteristicSymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (I C = 10 mA, I B = 0) V (BR)CEO 20——Vdc Collector – Base Breakdown Voltage (I C = 100 μA, I E = 0 ) V (BR)CBO 25——Vdc Emitter – Base Breakdown Voltage (I E = 100 μA, I C = 0) V (BR)EBO 5.0——Vdc Collector Cutoff Current (V CB = 25 V, I E = 0) (V CB = 25 V, I E = 0, T J = 150°C) I CBO — — — — 10 1.0 μAdc mAdc Emitter Cutoff Current (V EB = 5.0 V, I C = 0) I EBO ——10μAdc ON CHARACTERISTICS DC Current Gain (V CE = 10 V, I C = 5.0 mA) (V CE = 1.0 V, I C = 0.5 A)BC368, 369 BC368–25 (V CE = 1.0 V, I C = 1.0 A) h FE 50 85 170 60 — — — — — 375 375 — — Bandwidth Product (I C = 10 mA, V CE = 5.0 V, f = 20 MHz)f T 65——MHz Collector–Emitter Saturation Voltage (I C = 1.0 A, I B = 100 mA)V CE(sat) ——0.5V Base–Emitter On Voltage (I C = 1.0 A, V CE = 1.0 V)V BE(on) ——1.0V Order this document by BC368/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BC368, -25 PNP BC369 CASE 29–04, STYLE 14 TO–92 (TO–226AA) 1 2 3 Voltage and current are negative for PNP transistors  Motorola, Inc. 1999 COLLECTOR 2 3 BASE 1 EMITTER COLLECTOR 2 3 BASE 1 EMITTER NPNPNP REV 1

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