BC373 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolBC372BC373Unit Collector – Emitter VoltageV CES 10080Vdc Collector – Base VoltageV CBO 10080Vdc Emitter – Base VoltageV EBO 12Vdc Collector Current — ContinuousI C 1.0Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg –55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = 100 mAdc, I B = 0)BC372 BC373 V (BR)CES 100 80 — — — — Vdc Collector – Base Breakdown Voltage (I C = 100 mAdc, I E = 0)BC372 BC373 V (BR)CBO 100 80 — — — — Vdc Emitter – Base Breakdown Voltage (I E = 10 mAdc, I C = 0) V (BR)EBO 12——Vdc Collector Cutoff Current (V CB = 80 Vdc, I E = 0)BC372 (V CB = 60 Vdc, I E = 0)BC373 I CBO — — — — 100 100 nAdc Emitter Cutoff Current (V EB = 10 V, I C = 0) I EBO ——100nAdc 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. Order this document by BC372/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC372 BC373 CASE 29–04, STYLE 1 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 3 BASE 2 EMITTER 1

Specifications