BC447 datasheet pdf

 Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 2 1Publication Order Number: BC447/D BC447, BC449, BC449A High Voltage Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector-Emitter Voltage BC447 BC449, BC449A V CEO 80 100 Vdc Collector-Base Voltage BC447 BC449, BC449A V CBO 80 100 Vdc Emitter-Base VoltageV EBO 5.0Vdc Collector Current - ContinuousI C 300mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg -55 to +150 °C Moisture Sensitivity Level (MSL) Electrostatic Discharge (ESD) MSL: 1 NA THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction-to-Ambient R θ JA 200°C/W Thermal Resistance, Junction-to-Case R θ JC 83.3°C/W DevicePackageShipping ORDERING INFORMATION BC447TO-92 http://onsemi.com CASE 29 TO-92 STYLE 17 5000 Units/Box 3 2 1 BC449TO-925000 Units/Box COLLECTOR 1 2 BASE 3 EMITTER BC449ATO-925000 Units/Box MARKING DIAGRAM BC 44xx YWW BC44xx = Specific Device Code xx= 7, 9 or 9A Y= Year WW= Work Week

Specifications