BC450A datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Voltage Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO –100Vdc Collector – Base VoltageV CBO –100Vdc Emitter – Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –300mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = –1.0 mAdc, I B = 0) V (BR)CEO –100——Vdc Collector – Base Breakdown Voltage (I C = –100 mA, I E = 0) V (BR)CBO –100——Vdc Emitter – Base Breakdown Voltage (I E = –10 mAdc, I C = 0) V (BR)EBO –5.0——Vdc Collector Cutoff Current (V CB = –80 Vdc, I E = 0) I CBO ——–100nAdc ON CHARACTERISTICS* DC Current Gain (I C = –2.0 mA, V CE = –5.0 V)BC450 BC450A (I C = –10 mA, V CE = –5.0 V)BC450 BC450A (I C = –100 mA, V CE = –5.0 V)BC450 BC450A h FE 50 120 50 100 50 60 — — — — — — 460 220 — — — — — 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%. Order this document by BC450/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC450,A CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 1 2 BASE 3 EMITTER

Specifications