Loading PDF...
Pages: 6
1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Current Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 80Vdc Collector – Base VoltageV CBO 80Vdc Emitter – Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 0.5Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = 10 mAdc, I B = 0) V (BR)CEO 80——Vdc Collector – Base Breakdown Voltage (I C = 100 mAdc, I E = 0) V (BR)CBO 80——Vdc Emitter – Base Breakdown Voltage (I E = 10 mAdc, I C = 0) V (BR)EBO 5.0——Vdc Collector Cutoff Current (V CB = 60 Vdc, I E = 0) I CBO ——100nAdc ON CHARACTERISTICS* DC Current Gain (I C = 10 mAdc, V CE = 2.0 Vdc) (I C = 100 mAdc, V CE = 2.0 Vdc)BC489 BC489A BC489B (I C = 1.0 Adc, V CE = 5.0 Vdc)* h FE 40 60 100 160 15 — — 160 260 — — 400 250 400 — — 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. Order this document by BC489/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC489,A,B CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3 Motorola, Inc. 1996 COLLECTOR 1 2 BASE 3 EMITTER