BC490 (1) datasheet pdf

© Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1Publication Order Number: BC490/D BC490 High Current Transistors PNP Silicon Features •This is a Pb−Free Device* MAXIMUM RATINGS RatingSymbolValueUnit Collector − Emitter VoltageV CEO −80Vdc Collector − Base VoltageV CBO −80Vdc Emitter − Base VoltageV EBO −4.0Vdc Collector Current − ContinuousI C −1.0Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 W mW/°C Operating and Storage Junction Temperature Range T J , T stg −55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction−to−Ambient R q JA 200°C/W Thermal Resistance, Junction−to−Case R q JC 83.3°C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DevicePackageShipping ORDERING INFORMATION COLLECTOR 1 2 BASE 3 EMITTER http://onsemi.com BC490GTO−92 (Pb−Free) 5000 Units / Bulk 1 2 3 STRAIGHT LEAD BULK PACK TO−92 CASE 29 STYLE 17 MARKING DIAGRAM BC 490 AYWWG G A= Assembly Location Y= Year WW= Work Week G= Pb−Free Package (Note: Microdot may be in either location)

Features

• •This is a Pb−Free Device*
• 5.0
• 1.5
• 83.3°C/W
• *For additional information on our Pb−Free strategy and soldering details, please