BC490A datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Current Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO –80Vdc Collector – Base VoltageV CBO –80Vdc Emitter – Base VoltageV EBO –4.0Vdc Collector Current — ContinuousI C –0.5Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = –10 mAdc, I B = 0) V (BR)CEO –80——Vdc Collector – Base Breakdown Voltage (I C = –100 mAdc, I E = 0) V (BR)CBO –80——Vdc Emitter – Base Breakdown Voltage (I E = –10 mAdc, I C = 0) V (BR)EBO –4.0——Vdc Collector Cutoff Current (V CB = –60 Vdc, I E = 0) I CBO ——–100nAdc ON CHARACTERISTICS* DC Current Gain (I C = –10 mAdc, V CE = –2.0 Vdc) (I C = –100 mAdc, V CE = –2.0 Vdc)BC490 BC490A (I C = –1.0 Adc, V CE = –5.0 Vdc) h FE 40 60 100 15 — — 140 — — 400 250 — — 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. Order this document by BC490/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC490,A CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 1 2 BASE 3 EMITTER

Specifications